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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION With TO-3PN package Complement to type 2SD2389 APPLICATIONS Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage EMIC ES Open base Open collector TC=25ae Open emitter DUC ON VALUE -160 TOR UNIT V V V A A W ae ae -150 -5 -8 -1 80 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-6A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=1A ; VCE=-12V 5000 160 65 MIN -150 TYP. 2SB1559 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT MAX UNIT V -2.5 -3.0 -100 -100 |I |I V V A A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time hFE Classifications O 5000-12000 HAN INC P 6500-20000 SEM GE Y IC=-6A;RL=10| IB1=- IB2=-6mA VCC=60V OND IC TOR UC 0.7 |I 3.6 0.9 |I s |I s s 15000-30000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1559 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1559 SEM GE HAN INC OND IC TOR UC 4 |
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